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Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112
Figure 1: (a) Device layout of a bottom-contact organic field-effect transistor, showing n-Si as gate electro...
Figure 2: Voltage dependence (Vd and Vg) of the magnetoresistance for compositions of (a) 51:49, (b) 78:22 an...
Figure 3: The drain voltage VdSC, at which the sign reversal takes place, is plotted for different Vg for all...
Figure 4: Representative MR line shape curves are shown at Vd = −5 V and +5 V. Black and red lines indicate f...
Figure 5: The dependence of the MR line shape curves on the drain voltage Vd is shown for a mixing ratio of (...
Figure 6: Voltage dependence of the line shape width B0. The values of B0 were obtained from fitting the data...
Figure 7: Experimental raw data covering ultrasmall magnetic-field effects including a MR sign-reversal. For B...
Figure 8: Ultrasmall magnetic field effects obtained for different compositions of Spiro-TTB/HAT-CN systems w...
Figure 9: Magnetic-field effects in transistors based on different composition of Spiro-TTB and HAT-CN with a...